2008. 9. 10 1/3 semiconductor technical data KTK5132U revision no : 1 ultra-high speed switching applications analog switch applications features ? 2.5 gate drive. ? low threshold voltage : v th =0.5 ?- 1.5v. ? high speed. ? small package. ? enhancement-mode. maximum rating (ta=25 ? ) dim millimeters a b d e 1. source 2. gate 3. drain usm 2.00 0.20 1.25 0.15 0.90 0.10 0.3+0.10/-0.05 2.10 0.20 0.65 0.15+0.1/-0.06 1.30 0.00-0.10 0.70 c g h j k l k 1 3 2 e b d a j g c l h mm n n m0.4 2 0.10 n0 .10 min + _ + _ + _ + _ + _ electrical characteristics (ta=25 ? ) type name marking kb lot no. n channel mos field effect transistor d g s this transistor is electrostatic sensitive device. please handle with caution. equivalent circuit characteristic symbol test condition min. typ. max. unit gate leakage current i gss v gs = ?? 16v, v ds =0v - - ?? 1 a drain-source breakdown voltage v (br)dss i d =100 a, v gs =0v 30 - - v drain cut-off current i dss v ds =30v, v gs =0v - - 1 a gate threshold voltage v th v ds =3v, i d =0.1ma 0.5 - 1.5 v forward transfer admittance |y fs | v ds =3v, i d =10ma 25 - - ms drain-source on resistance r ds(on) i d =10ma, v gs =2.5v - 4 7 ? input capacitance c iss v ds =3v, v gs =0v, f=1mhz - 8.5 - pf reverse transfer capacitance c rss v ds =3v, v gs =0v, f=1mhz - 3.3 - pf output capacitance c oss v ds =3v, v gs =0v, f=1mhz - 9.3 - pf switching time turn-on time t on v dd =5v, i d =10ma, v gs =0 ?- 5v - 50 - ns turn-off time t off - 180 - ns characteristic symbol rating unit drain-source voltage v ds 30 v gate-source voltage v gss ?? 20 v dc drain current i d 100 ma drain power dissipation p d * 200 mw channel temperature t ch 150 ? storage temperature range t stg -55 ?- 150 ? note) * package mounted on 99.5% alumina 10 ?? 8 ?? 0.6 ? )
2008. 9. 10 2/3 KTK5132U revision no : 1 dr drain reverse current i (ma) drain-source votage v (v) ds ds dr i - v drain-source voltage v (v) drain current i (ma) d 0 ds 0 i - v dds drain current i (ma) forward transfer admittance 1 d y - i drain-source voltage v (v) drain current i (ma) d ds (low voltage region) 2 common source ta=25 c v =1.2v gs 0.2 0 0 0.1 ta=25 c common v =0.9v gs fs d fs y (ms) 35 10 30 50 common source v =3v ds 4681012 20 0.2 0.3 0.4 0.5 0.6 0.4 0.6 0.8 1.0 i - v ds d 0 ta=25 c 5 10 30 50 100 300 100 40 60 80 100 1.4v 2.5v 2.2v 2.0v 1.8v 1.6v source 1.0v 1.05v 1.1v 1.15v 1.2v 2.5v 0.01 0.1 1 10 100 0.03 0.3 3 30 10 drain current i (ma) gate-source votage v (v) 0.1 1 0.01 0 0.03 1 0.3 3 gs ta=25 c common source d i - v 100 30 ds v =3v gs d 2 345 ta=-25 c ta=100 c common source ta=25 c f=1mhz v =0 drain-source voltage v (v) capacitance c (pf) 0.1 1 0.5 0.3 3 c - v gs ds 20 10 5 ds c rss oss c c iss 1 5 3 10 50 30 100 -0.4 -0.8 -1.2 -1.6 common source v =0 gs ta=25 c d i s g dr
2003. 7. 8 3/3 KTK5132U revision no : 0 v - i d drain current i (ma) drain-source on voltage ds(on) d ds(on) v (v) switching time t (ns) drain current i (ma) d d t - i common source v =5v dd p - ta d ambient temperature ta ( c) 02040 100 d 0 drain power dissipation p (mw) 60 80 100 120 140 160 200 300 d.u. 1% < = v :t , t < 5ns in rf (z =50 ? ) out ta=25 c i v 5v 0 10 s v r out d v in l 50 ? dd ta=25 c out (z =50 ? ) r v :t , t < 5ns d.u. 1% v =5v common source 10 s 5v 0 dd l v 50 ? in v r v i d out in dd = < f v in 5v 90% dd v 0 out v in v 10% 10% 90% ds v (on) on t off t f t r t switching time test circuit 1310 100 30 5 common source ta=25 c gs v =2.5v 50 10 1k 30 50 100 300 500 on r t off t f t 2 0.005 0.01 0.03 0.05 0.1 0.3 0.5 1 530 10 50 3 1 100 t mounted on 99.5% alumina 10 x 8 x 0.6mm ta=25 c 1 2 1 2
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